High-Tam sim no Zaj duab xis Capacitor Snubber rau Vuam Tshuab (SMJ-TC)

Lus piav qhia luv luv:

Capacitor Qauv: SMJ-TC

Nta:

1. Copper ceev electrodes

2. Lub cev me me thiab yooj yim installation

3. Mylar daim kab xev winding tshuab

4. Qhuav resin filling

5. Tsawg Equivalent Series Inductance (ESL) thiab Sib npaug Series Resistance (ESR)

Daim ntawv thov:

1. GTO Snubber

2. Peak Voltage thiab Peak Tam sim no Absorption thiab kev tiv thaiv rau Switching Cheebtsam hauv cov khoom siv hluav taws xob

Snubber circuits yog qhov tseem ceeb rau diodes siv nyob rau hauv switching circuits.Nws tuaj yeem txuag lub diode los ntawm overvoltage spikes, uas yuav tshwm sim thaum lub sij hawm rov qab txheej txheem.

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Product Detail

Khoom cim npe

Cov ntaub ntawv technical

Kev khiav hauj lwm qhov kub thiab txias	Max. Ua haujlwm kub., Sab saum toj, max: + 85 ℃ Upper qeb kub: +85 ℃ qis qeb kub: -40 ℃
capacitance ntau yam	0.22 ~ 3 μF
Rated voltage	3000V DC rau 10000V DC
Cap.tol	± 5% (J); ± 10% (K)
Nrog voltage	1.35 Nws DC / 10S
Dissipation factor	tgδ≤0.001 f = 1KHz
Rwb thaiv tsev tsis kam	C≤0.33μF RS≥15000 MΩ (ntawm 20 ℃ 100V.DC 60S) C＞ 0.33μF RS * C≥5000S (ntawm 20 ℃ 100V.DC 60S)
Nrog kev tawm tsam tam sim no	saib daim ntawv qhia
Lub neej expectancy	100000h (Un; Θhotspot≤70 ° C)
Kev siv tus qauv	IEC 61071;

Feature

1. Mylar daim kab xev, kaw nrog resin;

2. Cov txiv ntseej tooj liab;

3. Resistance rau high voltage, tsawg tgδ, tsis tshua muaj kub nce;

4. Tsawg ESL thiab ESR;

5. High mem tes tam sim no.

Daim ntawv thov

1. GTO Snubber.

2. Siv dav hauv cov khoom siv hluav taws xob hluav taws xob thaum lub zog siab tshaj plaws, kev tiv thaiv kev nqus tam sim no.

Hom Circuit Court

Daim duab kos duab

Specification

Un = 3000VDC
Capacitance (μF)	φD (mm)	L (mm)	L1 (mm)	ESL (nH)	dv/dt(V/μS)	Ipk (A)	Irms (A)
0.22	35	44	52	25	1100	242	30
0.33 ib	43	44	52	25	1000	330	35
0.47 ib	51	44	52	22	850	399 ib	45
0.68 ib	61	44	52	22	800	544 ib	55
1	74	44	52	20	700	700	65
1.2	80	44	52	20	650	780 ua	75
1.5	52	70	84	30	600	900	45
2.0	60	70	84	30	500	1000	55
3.0	73	70	84	30	400	1200	65
4.0	83	70	84	30	350	1400	70
Un = 6000VDC
Capacitance (μF)	φD (mm)	L (mm)	L1 (mm)	ESL (nH)	dv/dt(V/μS)	Ipk (A)	Irms (A)
0.22	43	60	72	25	1500	330	35
0.33 ib	52	60	72	25	1200	ib 396	45
0.47 ib	62	60	72	25	1000	470 ib	50
0.68 ib	74	60	72	22	900	612	60
1	90	60	72	22	800	900	75

Un = 7000V.DC
Capacitance (μF)	φD (mm)	L (mm)	L1 (mm)	ESL (nH)	dv/dt(V/μS)	Ipk (A)	Irms (A)
0.22	45	57	72	25	1100	242	30
0.68 ib	36	80	92	28	1000	680	25
1.0	43	80	92	28	850	850	30
1.5	52	80	92	25	800	1200	35
1.8	57	80	92	25	700	1260	40
2.0	60	80	92	23	650	1300	45
3.0	73	80	92	22	500	1500	50

Un = 8000VDC
Capacitance (μF)	φD (mm)	L (mm)	L1 (mm)	ESL (nH)	dv/dt(V/μS)	Ipk (A)	Irms (A)
0.33 ib	35	90	102	30	1100	363	25
0.47 ib	41	90	102	28	1000	470 ib	30
0.68 ib	49	90	102	28	850	578 ib	35
1	60	90	102	25	800	800	40
1.5	72	90	102	25	700	1050	45
2.0	83	90	102	25	650	1300	50

Un = 10000V.DC
Capacitance (μF)	φD (mm)	L (mm)	L1 (mm)	ESL (nH)	dv/dt(V/μS)	Ipk (A)	Irms (A)
0.33 ib	45	114	123	35	1500	495 ib	30
0.47 ib	54	114	123	35	1300	611	35
0.68 ib	65	114	123	35	1200	816 ib	40
1	78	114	123	30	1000	1000	55
1.5	95	114	123	30	800	1200	70